c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . w w w w bn1300 bn1300 bn1300 bn1300 2ld 2ld 2ld 2ld rev.a may .201 1 high voltage fast -switching npn power transistor features ? very high switching speed ? high voltage capability ? wide reverse bias soa general description this device is designed for high voltage , high speed switching characteristics required such as lighting system, switching mode power supply. absolute maximum ratings symbol parameter test conditions value units v ces collector-emitter voltage v be =0 350 v v ceo collector-emitter voltage i b =0 200 v v ebo emitter-base voltage i c =0 7 v i c collector current 1.5 a i cp collector pulse current 3.0 a i b base current 1 a i bm base peak current t p =5ms 2 a p c total dissipation at tc=25 1 w t j operation junction temperature -40~150 t stg storage temperature -40~150 tc:case temperature(good cooling) thermal characteristics symbol parameter value units r qja thermal resistance junction to ambient max) 125 /w
w w w w bn1300 bn1300 bn1300 bn1300 2ld 2ld 2ld 2ld 2 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance electrical characteristics (tc=25 unless otherwise noted) symbol parameter test conditions value units min typ max v ceo(sus) collector-emitter breakdown voltage ic=10ma,ib=0 2 00 - - v v ce(sat) collector-emitter saturation voltage ic=0.5a,ib=0.1a ic=1.0a,ib=0.25a - - 1.0 1.5 v v be(sat) base -emitter saturation voltage ic=0.5a,ib=0.1a ic=1.0a,ib=0.25a - - 1.0 1. 5 v i cbo collector - base cutoff current vcb= 350 v, ie=0 - - 100 a i c e o collector - emitter cutoff current vce=200v, ib=0 - - 50 a i e bo emitte r - base cutoff current veb=7v, ic=0 - - 10 a hfe dc current gain vce= 5 v,ic=0. 2 a vce= 5 v,ic=1.0a 8 5 - - 50 - ts tf storage time fall time v cc = 24 v,ic= 0.5 a i b1 = - i b2 = 0.1 a - - 1.8 0. 21 4 .0 0. 5 s f t current gain bandwidth product vce=10v,ic=0.5a 4 - - mhz note: pulse test : pulse width 300,duty cycle 2%
w w w w bn1300 bn1300 bn1300 bn1300 2ld 2ld 2ld 2ld 3 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig.1 dc current gain fig.2 base -emitter saturation voltage fig.3 collector-emitter saturation voltage fig.5 static characteristics fig.6 power derating
w w w w bn1300 bn1300 bn1300 bn1300 2ld 2ld 2ld 2ld 4 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance resistive load switching test circuit inductive load switching & rbsoa test circuit
w w w w bn1300 bn1300 bn1300 bn1300 2ld 2ld 2ld 2ld 5 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance to-92 to-92 to-92 to-92 package package package package dimension dimension dimension dimension unit:mm
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